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| SK 60 GB 125 Absolute Maximum Ratings Symbol Conditions IGBT Values Units Inverse/Freewheeling CAL diode SEMITOP(R) 3 IGBT Module SK 60 GB 125 Preliminary Data Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Inverse\Freewheeling CAL diode Mechanical data GB 1 19-10-2006 DIL (c) by SEMIKRON SK 60 GB 125 Fig.5 Typical output characteristic, Tj=25C Fig.6 Typical output characteristic, Tj=125C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic Fig.10 Typ. capacitances vs. VCE 2 19-10-2006 DIL (c) by SEMIKRON SK 60 GB 125 Fig.11 Typ. switching times vs. IC Fig.12 Typ. switching times vs. gate resistor RG Fig. 14 Typ. CAL Diode forward characteristic 3 19-10-2006 DIL (c) by SEMIKRON SK 60 GB 125 UL Recognized File no. E 63532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 19-10-2006 DIL (c) by SEMIKRON |
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